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WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : WSF3012

Type : Mosfet Power Transistor

Junction temperature : 150℃

RDSON : 50mΩ

Features : Super Low Gate Charge

Usage : High Frequency Point-of-Load Synchronous

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WSF3012 N-Ch and P-Channel MOSFET

 

Description

 

The WSF3012 is the highest performance trench N-ch
and P-ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate charge for
most of the synchronous buck converter applications .
The WSF3012 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full function
reliability approved.

 

Product Summery

 

WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet

 

 

Features
  • z Advanced high cell density Trench technology
  • z Super Low Gate Charge
  • z Excellent CdV/dt effect decline
  • z 100% EAS Guaranteed
  • z Green Device Available

 

 

Applications

 

z High Frequency Point-of-Load Synchronous
  Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z CCFL Back-light Inverter

 

Absolute Maximum Ratings

 

WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet

 

 

Thermal Data
 
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
 
 
 
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
 
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
 
 
Guaranteed Avalanche Characteristics
 
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
 
 
Diode Characteristics
 
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
 
 
 
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
 
 
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
 
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
 
Guaranteed Avalanche Characteristics
 
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
 
 
Diode Characteristics
 
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
 
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A
4. The power dissipation is limited by 150℃ junction temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
 
N-Channel Typical Characteristics
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power MosfetWSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
 
 
 
 
P-Channel Typical Characteristics
 
 
WSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power MosfetWSF3012 Mosfet Power Transistor 50mΩ RDSON Switching Power Mosfet
 

Product Tags:

high current mosfet switch

      

high voltage transistor

      
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