TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

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TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

Name: TIP122 TIP127 Semiconductor Triode TO126 Plastic Encapsulated Transistors
Brand: Hua Xuan Yang
Price: 1 USD

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : TIP127

Type : Semiconductor Triode

Power Mosfet Transistor : TO-126 Plastic Encapsulated

Product ID : TIP122 TIP127

Feature : High DC Current Gain

Collector Power Dissipation : 1.25w

Junction Temperature : 150℃

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TO-126 Plastic-Encapsulate Transistors

TIP122 Darlington Transistor (NPN)

TIP127 Darlington Transistor (PNP)

FEATURE

Medium Power Complementary Silicon Transistors

TO-126

1. EMITTER

2. COLLECTOR

3. BASE

MARKING

TIP122 , TIP127=Device code

Solid dot = Green molding compound device, if none, the normal device XX=Code

TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

Equivalent Circuit

ORDERING INFORMATION

Part Number	Package	Packing Method	Pack Quantity
TIP122	TO-126	Bulk	200pcs/Bag
TIP127	TO-126	Bulk	200pcs/Bag
TIP122-TU	TO-126	Tube	60pcs/Tube
TIP127-TU	TO-126	Tube	60pcs/Tube

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	TIP122	TIP127	Unit
VCBO	Collector-Base Voltage	100	-100	V
VCEO	Collector-Emitter Voltage	100	-100	V
VEBO	Emitter-Base Voltage	5	-5	V
I_C	Collector Current -Continuous	5	-5	A
P_C *	Collector Power Dissipation	1.25		W
RθJA	Thermal Resistance Junction to Ambient	100		℃/W
RθJc	Thermal Resistance Junction to Case	8.33		℃/W
T_J	Junction Temperature	150		℃
Tstg	Storage Temperature	-55~+150		℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

TIP122 NPN
Parameter	Symbol	Test conditions	Min	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=1mA,I_E=0	100		V
Collector-emitter breakdown voltage	V_CEO(SUS)	I_C=30mA,I_B=0	100		V
Collector cut-off current	ICBO	V_CB=100V, I_E=0		0.2	mA
Collector cut-off current	ICEO	V_CE=50 V, I_B=0		0.5	mA
Emitter cut-off current	IEBO	V_EB=5 V, I_C=0		2	mA
DC current gain	hFE(1)	V_CE= 3V, I_C=0.5A	1000
DC current gain	hFE(2)	V_CE= 3V, I_C=3 A	1000	12000
Collector-emitter saturation voltage	V_CE(sat)	I_C=3A,I_B=12mA		2	V
Collector-emitter saturation voltage	V_CE(sat)	I_C=5 A,I_B=20mA		4	V
Base-emitter voltage	VBE	V_CE=3V, I_C=3 A		2.5	V
Output Capacitance	Cob	V_CB=10V, I_E=0,f=0.1MHz		200	pF

TIP127 PNP
Parameter	Symbol	Test conditions	Min	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=-1mA,I_E=0	-100		V
Collector-emitter breakdown voltage	V_CEO(SUS)	I_C=-30mA,I_B=0	-100		V
Collector cut-off current	ICBO	V_CB=-100V, I_E=0		-0.2	mA
Collector cut-off current	ICEO	V_CE=-50 V, I_B=0		-0.5	mA
Emitter cut-off current	IEBO	V_EB=-5 V, I_C=0		-2	mA
DC current gain	hFE(1)	V_CE=-3V, I_C=-0.5A	1000
DC current gain	hFE(2)	V_CE=-3V, I_C=-3A	1000	12000
Collector-emitter saturation voltage	V_CE(sat)	I_C=-3A,I_B=-12mA		-2	V
Collector-emitter saturation voltage	V_CE(sat)	I_C=-5 A,I_B=-20mA		-4	V
Base-emitter voltage	VBE	V_CE=-3V, I_C=-3 A		-2.5	V
Output Capacitance	Cob	V_CB=-10V, I_E=0,f=0.1MHz		300	pF

* This test is performed with no heat sink at T_a=25℃.

Typical Characteristics

TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

TO-126 Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	2.500	2.900	0.098	0.114
A1	1.100	1.500	0.043	0.059
b	0.660	0.860	0.026	0.034
b1	1.170	1.370	0.046	0.054
c	0.450	0.600	0.018	0.024
D	7.400	7.800	0.291	0.307
E	10.600	11.000	0.417	0.433
e	2.290 TYP		0.090 TYP
e1	4.480	4.680	0.176	0.184
h	0.000	0.300	0.000	0.012
L	15.300	15.700	0.602	0.618
L1	2.100	2.300	0.083	0.091
P	3.900	4.100	0.154	0.161
Φ	3.000	3.200	0.118	0.126

TIP122 TIP127 Semiconductor Triode TO-126 Plastic Encapsulated Transistors

Product Tags:

electronic components triode

semiconductor switch

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