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OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

Brand Name : Hua Xuan Yang

Model Number : 12N60

Certification : RoHS、SGS

Place of Origin : ShenZhen China

MOQ : 1000-2000 PCS

Price : Negotiated

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Delivery Time : 1 - 2 Weeks

Packaging Details : Boxed

Product name : Mosfet Power Transistor

APPLICATION : Power Management

FEATURE : Excellent RDS(on)

Power mosfet transistor : Enhancement Mode Power MOSFET

Type : N Channel Mosfet Transistor

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OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

 

N Channel Mosfet Transistor DESCRIPTION

The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.

OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

 

N Channel Mosfet Transistor FEATURES

  * RDS(ON) < 0.7 Ω @ VGS = 10 V, ID = 6.0 A

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness

 

OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

 

ORDERING INFORMATION

Ordering Number Package Pin Assignment Packing
Lead Free Halogen Free   1 2 3  
12N60L-TF1-T 12N60G-TF1-T TO-220F1 G D S Tube
12N60L-TF3-T 12N60G-TF3-T TO-220F G D S Tube

 

 

Note: Pin Assignment: G: Gate D: Drain S: Source

 

 

OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

 

ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

 

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNI T
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 600     V
Drain-Source Leakage Current IDSS VDS=600V, VGS=0V     1 μA
Gate- Source Leakage Current Forward IGSS VGS=30V, VDS=0V     100 nA
Reverse VGS=-30V, VDS=0V     -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0   4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=6.0A     0.7
DYNAMIC CHARACTERISTICS
Input Capacitance CISS

 

VGS=0V, VDS=25V, f =1.0 MHz

  1465   pF
Output Capacitance COSS   245   pF
Reverse Transfer Capacitance CRSS   57   pF
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1) QG VDS=50V, ID=1.3A, IG=100μA VGS=10V (Note 1,2)   144   nC
Gate-Source Charge QGS   10   nC
Gate-Drain Charge QGD   27   nC
Turn-On Delay Time (Note 1) tD(ON)

 

VDD =30V, ID =0.5A,

RG =25Ω, VGS=10V (Note 1,2)

  81   ns
Turn-On Rise Time tR   152   ns
Turn-Off Delay Time tD(OFF)   430   ns
Turn-Off Fall Time tF   215   ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current IS       12 A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM       48 A
Drain-Source Diode Forward Voltage VSD VGS=0 V, IS=6.0 A     1.4 V
Reverse Recovery Time trr

VGS=0 V, IS=6.0 A,

dIF/dt=100 A/μs (Note 1)

  336   ns
Reverse Recovery Charge Qrr   2.21   μC

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C

6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

 

 

ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)

 

Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100 110 - V
Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.2 1.8 2.5 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID =8A 98   130 m Ω
Forward Transconductance gFS VDS=25V,ID=6A 3.5 - - S
Dynamic Characteristics (Note4)
Input Capacitance Clss

 

VDS=25V,VGS=0V, F=1.0MHz

- 690 - PF
Output Capacitance Coss   - 120 - PF
Reverse Transfer Capacitance Crss   - 90 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on)

 

VDD=30V,ID=2A,RL=15Ω VGS=10V,RG=2.5Ω

- 11 - nS
Turn-on Rise Time tr   - 7.4 - nS
Turn-Off Delay Time td(off)   - 35 - nS
Turn-Off Fall Time tf   - 9.1 - nS
Total Gate Charge Qg

 

VDS=30V,ID=3A, VGS=10V

- 15.5   nC
Gate-Source Charge Qgs   - 3.2 - nC
Gate-Drain Charge Qgd   - 4.7 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=9.6A - - 1.2 V
Diode Forward Current (Note 2) IS   - - 9.6 A
Reverse Recovery Time trr

TJ = 25°C, IF =9.6A

di/dt = 100A/μs(Note3)

- 21   nS
Reverse Recovery Charge Qrr   - 97   nC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)


Essentially independent of operating temperature.Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

 

OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

 

 


Product Tags:

n channel mosfet transistor

      

high voltage transistor

      
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