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BAV16W/1N4148W Dual Switching Diode Fast Switching RθJA 250mW

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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BAV16W/1N4148W Dual Switching Diode Fast Switching RθJA 250mW

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : BAV16W

Product ID : BAV16W/1N4148W

Feature : Fast reverse recovery time

Type : Switching Diodesod

VR(RMS) : 71v

RθJA : 250mW

TSTG : -55~+150

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1SS184 Switching Diode BAV16W/1N4148W FAST SWITCHING DIODE

 

FEATURES

Ÿ Fast Switching Speed

Ÿ Surface Mount Package Ideally Suited for Automatic Insertion

Ÿ For General Purpose Switching Applications

Ÿ High Conductance

 

BAV16W/1N4148W Dual Switching Diode Fast Switching RθJA 250mWMARKING: T6,T4

 

1N4148W BAV16W

T4

 

T4

T6

 

T6

 

The marking bar indicates the cathode

Solid dot = Green molding compound device,if none,the normal device.

 

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25

 

Parameter Symbol Limit Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V

Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage

DC Blocking Voltage

VRRM VRWM

VR

 

100

 

V

RMS Reverse Voltage VR(RMS) 71 V
Forward Continuous Current IFM 300 mA
Average Rectified Output Current IO 150 mA
Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A
Power Dissipation 1N4148W BAV16W

 

Pd

350

400

 

mW

Thermal Resistance from Junction to Ambient(Note 1) RθJA 250

 

℃/W

Junction Temperature Tj 150
Storage Temperature TSTG -55~+150

Note 1:Device mounted on 1''x1'' FR4 PCB,1oz single-side copper.

 

ELECTRICAL CHARACTERISTICS

BAV16W/1N4148W Dual Switching Diode Fast Switching RθJA 250mW

Electrical Ratings @Ta=25

 

Parameter Symbol Min Typ Max Unit Conditions

 

 

Forward voltage

VF1     0.715 V IF=1mA
VF2     0.855 V IF=10mA
VF3     1.0 V IF=50mA
VF4     1.25 V IF=150mA

 

Reverse current

IR1     1 μA VR=75V
IR2     25 nA VR=20V
Capacitance between terminals CT     2 pF VR=0V,f=1MHz

 

Reverse recovery time

 

trr

   

 

4

 

ns

IF=IR=10mA

Irr=0.1XIR,RL=100Ω

 

 


Product Tags:

high voltage switching diode

      

dual series switching diode

      
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