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HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : HXY2312

Product name : Mosfet Power Transistor

Junction temperature : 150℃

Material : Silicon

Case : Tape/Tray/Reel

Type : mosfet transistor

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SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET
 

 

Product Summary

 

ID= 6.0 A   VDSS=20v
RDS(on) <32 mΩ VGS =4.5V
RDS(on) <40 mΩ  VGS =2.5V
 
 
FEATURE 
 
TrenchFET Power MOSFET
 
 
APPLICATION
 
 
DC/DC Converters
Load Switching for Portable Applications
 
 
Maximum ratings (Ta=25℃ unless otherwise noted)
HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate
 
T =25 a ℃ unless otherwise specified
 
HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate
 
HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic EncapsulateHXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

Product Tags:

high current transistor

      

logic mosfet switch

      
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HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate Images

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