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MMBTA56 NPN Darlington Power Transistor , Fast Switching Transistor NPN

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MMBTA56 NPN Darlington Power Transistor , Fast Switching Transistor NPN

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : MMBTA56

Junction Temperature : 150 ℃

Collector Power Dissipation : 225mW

FEATURE : General Purpose Amplifier Applications

Material : Silicon

Collector Current : 600 mA

Storage Temperature : -55～+150℃

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SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (NPN)

 

FEATURE
 

l General Purpose Amplifier Applications

Marking :2GM

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -80 V
VCEO Collector-Emitter Voltage -80 V
VEBO Emitter-Base Voltage -4 V
IC Collector Current -500 mA
PC Collector Power Dissipation 225 mW
RΘJA Thermal Resistance From Junction To Ambient 555 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55～+150 ℃

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -80     V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -80     V
Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -4     V
Collector cut-off current ICBO VCB=-80V, IE=0     -0.1 µA
Collector cut-off current ICEO VCE=-60V, IB=0     -1 µA
Emitter-base breakdown voltage IEBO VEB=-4V, IC=0     -0.1 µA
DC current gain hFE(1) VCE=-1V, IC=-10mA 100   400  
  hFE(2) VCE=-1V, IC=-100mA 100      
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA     -0.25 V
Base-emitter voltage VBE VCE=-1V, IC=-100mA     -1.2 V
Transition frequency fT VCE=-1V,IC=-100mA, f=100MHz 50     MHz

 
 
 

 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e 0.950 TYP 0.037 TYP
e1 1.800 2.000 0.071 0.079
L 0.550 REF 0.022 REF
L1 0.300 0.500 0.012 0.020
θ 0° 8° 0° 8°

 

 

 

Typical Characteristics

MMBTA56 NPN Darlington Power Transistor , Fast Switching Transistor NPN

MMBTA56 NPN Darlington Power Transistor , Fast Switching Transistor NPN

MMBTA56 NPN Darlington Power Transistor , Fast Switching Transistor NPN

MMBTA56 NPN Darlington Power Transistor , Fast Switching Transistor NPN

 
 

MMBTA56 NPN Darlington Power Transistor , Fast Switching Transistor NPN
MMBTA56 NPN Darlington Power Transistor , Fast Switching Transistor NPN
 
 MMBTA56 NPN Darlington Power Transistor , Fast Switching Transistor NPN
 
 


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