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SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V

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SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : SOT-89-3L A44

Collector-Base Voltage : 400V

Junction Temperature : 150 ℃

Tstg : -55～+150℃

Material : Silicon

Collector Current : 600 mA

Collector Power Dissipation : 500mW

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SOT-89-3L Plastic-Encapsulate Transistors A44 TRANSISTOR (NPN)

 

 

FEATURE
 

Low Collector-Emitter Saturation Voltage

High Breakdown Voltage

 

Marking :A44

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 400 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 200 mA
ICM Collector Current -Pulsed 300 mA
PC Collector Power Dissipation 500 mW
RθJA Thermal Resistance from Junction to Ambient 250 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

Parameter Symbol T est conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 400     V
Collector-emitter breakdown voltage V(BR)CEO* IC=1mA,IB=0 400     V
Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 6     V
Collector cut-off current ICBO VCB=400V,IE=0     0.1 µA
Emitter cut-off current IEBO VEB=4V,IC=0     0.1 µA

 

 

DC current gain

 hFE(1)* VCE=10V, IC=1mA 40      
  hFE(2)* VCE=10V, IC=10mA 50   200  
  hFE(3)* VCE=10V, IC=50mA 45      
  hFE(4)* VCE=10V, IC=100mA 40      

 

Collector-emitter saturation voltage

 

VCE(sat)*

 IC=1mA,IB=0.1mA     0.4 V
    IC=10mA,IB=1mA     0.5 V
    IC=50mA,IB=5mA     0.75 V
Base-emitter saturation voltage VBE(sat)* IC=10mA,IB=1mA     0.75 V
Collector output capacitance Cob VCB=20V, IE=0, f=1MHz     7 pF
Emitter input capacitance Cib VBE=0.5V, IC=0, f=1MHz     130 pF

 
 
 

Typical Characteristics

SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V

SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V

SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V

SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V

 


 

 
 

 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 1.400 1.600 0.055 0.063
b 0.320 0.520 0.013 0.020
b1 0.400 0.580 0.016 0.023
c 0.350 0.440 0.014 0.017
D 4.400 4.600 0.173 0.181
D1 1.550 REF. 0.061 REF.
E 2.300 2.600 0.091 0.102
E1 3.940 4.250 0.155 0.167
e 1.500 TYP. 0.060 TYP.
e1 3.000 TYP. 0.118 TYP.
L 0.900 1.200 0.035 0.047

 
 
 SOT-89-3L Suggested Pad Layout

 

SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V
 
SOT-89-3L Tape and Reel
SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V
SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V
SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V
 
 
 


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