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A92 High Current NPN Transistor , High Power NPN Silicon Transistor

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A92 High Current NPN Transistor , High Power NPN Silicon Transistor

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : A92

Collector-Base Voltage : -310V

Type : Triode Transistor

Case : Tape/Tray/Reel

Material : Silicon

Collector Current : -200 mA

Collector Power Dissipation : 500mW

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SOT-89-3L Plastic-Encapsulate Transistors A92 TRANSISTOR (NPN)

 

 

FEATURE
 

Low Collector-Emitter Saturation Voltage

High Breakdown Voltage

 

Marking :A92

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -310 V
VCEO Collector-Emitter Voltage -305 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current- Continuous -200 mA
ICM Collector Current -Pulsed -500 mA
PC Collector Power Dissipation 500 mW
RθJA Thermal Resistance from Junction to Ambient 250 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-100µA,IE=0 -310     V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -305     V
Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5     V

 

Collector cut-off current

 ICBO VCB=-200V,IE=0     -0.25 µA
 

 

ICEO

 VCE=-200V,IB=0     -0.25 µA
    VCE=-300V,IB=0     -5 µA
Emitter cut-off current IEBO VEB=-5V,IC=0     -0.1 µA

 

DC current gain

 hFE(1) VCE=-10V, IC=-1mA 60      
  hFE(2) VCE=-10V, IC=-10mA 100   300  
  hFE(3) VCE=-10V, IC=-80mA 60      
Collector-emitter saturation voltage VCE(sat) IC=-20mA,IB=-2mA     -0.2 V
Base-emitter saturation voltage VBE(sat) IC=-20mA,IB=-2mA     -0.9 V
Transition frequency fT VCE=-20V,IC=-10mA,f=30MHz 50     MHz

 
 
 

Typical Characteristics

 

 

 

A92 High Current NPN Transistor , High Power NPN Silicon Transistor

A92 High Current NPN Transistor , High Power NPN Silicon Transistor

A92 High Current NPN Transistor , High Power NPN Silicon Transistor

A92 High Current NPN Transistor , High Power NPN Silicon Transistor

 

 


 

 
 

 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 1.400 1.600 0.055 0.063
b 0.320 0.520 0.013 0.020
b1 0.400 0.580 0.016 0.023
c 0.350 0.440 0.014 0.017
D 4.400 4.600 0.173 0.181
D1 1.550 REF. 0.061 REF.
E 2.300 2.600 0.091 0.102
E1 3.940 4.250 0.155 0.167
e 1.500 TYP. 0.060 TYP.
e1 3.000 TYP. 0.118 TYP.
L 0.900 1.200 0.035 0.047

 
 
 SOT-89-3L Suggested Pad Layout

 

A92 High Current NPN Transistor , High Power NPN Silicon Transistor
 
SOT-89-3L Tape and Reel
A92 High Current NPN Transistor , High Power NPN Silicon Transistor
A92 High Current NPN Transistor , High Power NPN Silicon Transistor
A92 High Current NPN Transistor , High Power NPN Silicon Transistor
 
 
 


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