FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

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FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

Name: FMMT591 Silicon Power Transistor SOT23 Plastic Encapsulated Transistors
Brand: Hua Xuan Yang
Price: 1 USD

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : FMMT591

VCBO Collector-Base Voltage : -80 V

Product Name : Semiconductor Triode

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SOT-23 Plastic-Encapsulate Transistors FMMT591 TRANSISTOR (PNP)

FEATURE

Low equivalent on-resistance

Marking :591

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-80	V
VCEO	Collector-Emitter Voltage	-60	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current	-1	A
ICM	Peak Pulse Current	-2	A
PC	Collector Power Dissipation	250	mW
RΘJA	Thermal Resistance From Junction To Ambient	500	℃/W
Tj	Junction Temperature	150	℃
Tstg	Storage Temperature	-55～+150	℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=-100μA, I_E=0	-80			V
Collector-emitter breakdown voltage	V(BR)CEO1	I_C=-10mA, I_B=0	-60			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=-100μA, I_C=0	-5			V
Collector cut-off current	ICBO	V_CB=-60V, I_E=0			-0.1	μA
Emitter cut-off current	IEBO	V_EB=-4V, I_C=0			-0.1	μA
DC current gain	hFE(1)	V_CE=-5V, I_C=-1mA	100
	hFE(2) 1	V_CE=-5V, I_C=-500mA	100		300
	hFE(3) 1	V_CE=-5V, I_C=-1A	80
	hFE(4) 1	V_CE=-5V, I_C=-2A	15
Collector-emitter saturation voltage	VCE(sat)1 1	I_C=-500mA, I_B=-50mA			-0.3	V
	VCE(sat)2 1	I_C=-1A, I_B=-100mA			-0.6	V
Base-emitter saturation voltage	VBE(sat) 1	I_C=-1A, I_B=-100mA			-1.2	V
Base-emitter voltage	1 VBE	V_CE=-5V, I_C=-1A			-1	V
Transition frequency	fT	V_CE=-10V,I_C=-50mA,,f=100MHz	150			MHz
Collector output capacitance	Cob	V_CB=-10V,f=1MHz			10	pF

Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.

Typical Characterisitics

FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	0.900	1.150	0.035	0.045
A1	0.000	0.100	0.000	0.004
A2	0.900	1.050	0.035	0.041
b	0.300	0.500	0.012	0.020
c	0.080	0.150	0.003	0.006
D	2.800	3.000	0.110	0.118
E	1.200	1.400	0.047	0.055
E1	2.250	2.550	0.089	0.100
e	0.950 TYP		0.037 TYP
e1	1.800	2.000	0.071	0.079
L	0.550 REF		0.022 REF
L1	0.300	0.500	0.012	0.020
θ	0°	8°	0°	8°

FMMT591 Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

Product Tags:

high frequency transistor

power mosfet transistors

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