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MMBT4403 NPN High Speed Switching Transistor High Performance

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MMBT4403 NPN High Speed Switching Transistor High Performance

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : MMBT4403

FEATURE : Low Leakage

Power mosfet transistor : SOT-23 Plastic-Encapsulate Transistors

Product ID : MMBT4403

Type : Switching Diodesod

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SOT-23 Plastic-Encapsulate Transistors MMBT4403 TRANSISTOR (NPN)

 

 

FEATURE
 

 Switching Transistor

Marking :2T

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -600 mA
PC Collector Power Dissipation 300 mW
RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55～+150 ℃

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

 

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40     V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40     V
Emitter-base breakdown voltage V(BR)EBO IE=-100μA ,IC=0 -5     V
Collector cut-off current ICBO VCB=-35V,IE=0     -0.1 μA
Collector cut-off current ICEX VCE=-35V, VBE=0.4V     -0.1 μA
Emitter cut-off current IEBO VEB=-4V,IC=0     -0.1 μA

 

 

 

DC current gain

 hFE1 VCE=-1V, IC=-0.1mA 30      
  hFE2 VCE=-1V, IC=-1mA 60      
  hFE3 VCE=-1V, IC=-10mA 100      
  hFE4 VCE=-2V, IC=-150mA 100   300  
  hFE5 VCE=-2V, IC=-500mA 20      

 

Collector-emitter saturation voltage

 

VCE(sat)

 IC=-150mA,IB=-15mA     -0.4 V
    IC=-500mA,IB=-50mA     -0.75 V

 

Base-emitter saturation voltage

 

VBE(sat)

 IC=-150mA,IB=-15mA     -0.95 V
    IC=-500mA,IB=-50mA     -1.3 V
Transition frequency fT VCE=-10V, IC=-20mA,f =100MHz 200     MHz
Delay time td

VCC=-30V, VBE(off)=-0.5V

IC=-150mA , IB1=-15mA

     15 ns
Rise time tr       20 ns
Storage time ts

VCC=-30V, IC=-150mA

IB1=IB2=-15mA

     225 ns
Fall time tf       60 ns

 
 
 
 
 
Typical Characterisitics  
 MMBT4403 NPN High Speed Switching Transistor High Performance

MMBT4403 NPN High Speed Switching Transistor High Performance

MMBT4403 NPN High Speed Switching Transistor High Performance
 

 

 

 

 
 
 
 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004
A2 0.900 1.050 0.035 0.041
b 0.300 0.500 0.012 0.020
c 0.080 0.150 0.003 0.006
D 2.800 3.000 0.110 0.118
E 1.200 1.400 0.047 0.055
E1 2.250 2.550 0.089 0.100
e 0.950 TYP 0.037 TYP
e1 1.800 2.000 0.071 0.079
L 0.550 REF 0.022 REF
L1 0.300 0.500 0.012 0.020
θ 0° 8° 0° 8°

 
 
 
 
 
 


Product Tags:

high frequency transistor

      

power mosfet transistors

      
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