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D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching

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D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : D882

Collector-Base Voltage : 40V

Collector Power Dissipation : 0.5W

Emitter-Base Voltage : 6V

Application : mobile power supply/ led driver/motor control

Collector Current- Pulsed : -0.3A

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SOT-89-3L Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN)

 

 

FEATURE
 

Power dissipation

 

Marking :A94

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 0.5 W

 

RӨJA

 Thermal Resistance from Junction to Ambient

 

250

 ℃/W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55~150 ℃

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40     V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30     V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6     V
Collector cut-off current ICBO VCB= 40V, IE=0     1 µA
Collector cut-off current ICEO VCE= 30V, IB=0     10 µA
Emitter cut-off current IEBO VEB= 6V, IC=0     1 µA

 

DC current gain

 hFE(1) VCE=2V, IC= 1A 60   400  
  hFE(2) VCE=2V, IC= 100mA 32      
Collector-emitter saturation voltage VCE(sat) IC= 2A, IB= 0.2 A     0.5 V
Base-emitter saturation voltage VBE(sat) IC= 2A, IB= 0.2 A     1.5 V

 

Transition frequency

 

fT

VCE= 5V , Ic=0.1A

f =10MHz

 

50

    

 

MHz

 
 

CLASSIFICATION OF hFE(1)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400

 

 

 

Typical Characteristics

 

 

 

D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed SwitchingD882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching

D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching

D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching

 

 

 


 

 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 1.400 1.600 0.055 0.063
b 0.320 0.520 0.013 0.020
b1 0.400 0.580 0.016 0.023
c 0.350 0.440 0.014 0.017
D 4.400 4.600 0.173 0.181
D1 1.550 REF. 0.061 REF.
E 2.300 2.600 0.091 0.102
E1 3.940 4.250 0.155 0.167
e 1.500 TYP. 0.060 TYP.
e1 3.000 TYP. 0.118 TYP.
L 0.900 1.200 0.035 0.047

 
 
 SOT-89-3L Suggested Pad Layout

 

D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching
 
SOT-89-3L Tape and Reel
D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching
D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching
D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching
 
 
 


Product Tags:

high frequency transistor

      

power switch transistor

      
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