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3DD13005 Npn Transistor Switch Emitter Base Voltage 9V High Efficiency

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3DD13005 Npn Transistor Switch Emitter Base Voltage 9V High Efficiency

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : 3DD13005

Collector-Base Voltage : 700v

Junction Temperature : 150 ℃

Emitter-Base Voltage : 9V

Product name : semiconductor triode type

Collector Dissipation : 1.25W

Type : Triode Transistor

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TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN)

 

FEATURE
 

Power Switching Applications

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current -Continuous 1.5 A
PC Collector Dissipation 1.25 W
TJ, Tstg Junction and Storage Temperature -55~+150 ℃

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO Ic= 1mA,IE=0 700     V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA,IB=0 400     V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9     V
Collector cut-off current ICBO VCB= 700V,IE=0     1 mA
Collector cut-off current ICEO VCE= 400V,IB=0     0.5 mA
Emitter cut-off current IEBO VEB= 9 V, IC=0     1 mA

 

DC current gain

 hFE(1) VCE= 5 V, IC= 0.5 A 8   40  
  hFE(2) VCE= 5 V, IC= 1.5A 5      
Collector-emitter saturation voltage VCE(sat) IC=1A,IB= 250 mA     0.6 V
Base-emitter saturation voltage VBE(sat) IC=1A, IB= 250mA     1.2 V
Base-emitter voltage VBE IE= 2A     3 V

 

Transition frequency

 

fT

VCE=10V,Ic=100mA

f =1MHz

 

5

    

 

MHz
Fall time tf IC=1A,IB1=-IB2=0.2A VCC=100V     0.5 µs
Storage time ts IC=250mA 2   4 µs

 

 

CLASSIFICATION OF hFE1

Rank              
Range 8-10 10-15 15-20 20-25 25-30 30-35 35-40

 

 

CLASSIFICATION OF tS

 

Rank A1 A2 B1 B2
Range 2-2.5 (μs ) 2.5-3(μs ) 3-3.5(μs ) 3.5-4 (μs )
         

 

 

 

TO-92 Package Outline Dimensions

 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min. Max. Min. Max.
A 4.470 4.670 0.176 0.184
A1 0.000 0.150 0.000 0.006
B 1.120 1.420 0.044 0.056
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
L 14.940 15.500 0.588 0.610
L1 4.950 5.450 0.195 0.215
L2 2.340 2.740 0.092 0.108
Φ 0° 8° 0° 8°
V 5.600 REF. 0.220 REF.

 

 

 

 

 


Product Tags:

tip pnp transistor

      

high power pnp transistor

      
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