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3DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation

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3DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : 3DD13003

VCBO : 700v

VCEO : 400V

Emitter-Base Voltage : 9V

Product name : semiconductor triode type

Collector Dissipation : 1.25W

Type : Triode Transistor

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TO-251-3L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR ( NPN )

 

FEATURE
 

Power Switching Applications

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current -Continuous 1.5 A
PC Collector Dissipation 1.25 W
TJ, Tstg Junction and Storage Temperature -55~+150 ℃

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO Ic= 1mA,IE=0 700     V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA,IB=0 400     V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9     V
Collector cut-off current ICBO VCB= 700V,IE=0     1 mA
Collector cut-off current ICEO VCE= 400V,IB=0     0.5 mA
Emitter cut-off current IEBO VEB= 9 V, IC=0     1 mA

 

DC current gain

 hFE(1) VCE= 5 V, IC= 0.5 A 8   40  
  hFE(2) VCE= 5 V, IC= 1.5A 5      
Collector-emitter saturation voltage VCE(sat) IC=1A,IB= 250 mA     0.6 V
Base-emitter saturation voltage VBE(sat) IC=1A, IB= 250mA     1.2 V
Base-emitter voltage VBE IE= 2A     3 V

 

Transition frequency

 

fT

VCE=10V,Ic=100mA

f =1MHz

 

5

    

 

MHz
Fall time tf IC=1A,IB1=-IB2=0.2A VCC=100V     0.5 µs
Storage time ts IC=250mA 2   4 µs

 

 

CLASSIFICATION OF hFE1

Rank              
Range 8-10 10-15 15-20 20-25 25-30 30-35 35-40

 

 

CLASSIFICATION OF tS

 

Rank A1 A2 B1 B2
Range 2-2.5 (μs ) 2.5-3(μs ) 3-3.5(μs ) 3.5-4 (μs )
         

 


Typical Characteristics

 

 3DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation3DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation3DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation
 

 

TO-92 Package Outline Dimensions

 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 1.050 1.350 0.042 0.054
B 1.350 1.650 0.053 0.065
b 0.500 0.700 0.020 0.028
b1 0.700 0.900 0.028 0.035
c 0.430 0.580 0.017 0.023
c1 0.430 0.580 0.017 0.023
D 6.350 6.650 0.250 0.262
D1 5.200 5.400 0.205 0.213
E 5.400 5.700 0.213 0.224
e 2.300 TYP. 0.091 TYP.
e1 4.500 4.700 0.177 0.185
L 7.500 7.900 0.295 0.311

 

 

 

 

 


Product Tags:

tip series transistors

      

high power pnp transistor

      
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