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TO-252Tip Power Transistors 3DD13002 Transistor NPN

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TO-252Tip Power Transistors 3DD13002 Transistor NPN

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : 3DD13002

Storage Temperature : -55~150℃

TJ : 150 ℃

Collector Power Dissipation : 1.25w

Product name : semiconductor triode type

Collector Current : 3.5A

Type : Triode Transistor

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TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR (NPN)

 

FEATURE
 

Power Switching Applications

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector -Base Voltage 600 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 1.25 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55~150 ℃

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 100μA,IE=0 600     V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA,IB=0 400     V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA,IC=0 6     V

 

Collector cut-off current

 ICBO VCB= 600V,IE=0     100 µA
  ICEO VCB= 400V,IE=0     100 µA
Emitter cut-off current IEBO VEB= 7V, IC=0     100 µA

 

Dc current gain

 hFE1 VCE= 10 V, IC= 200mA 9   40  
  hFE2 VCE= 10 V, IC= 0.25mA 5      
Collector-emitter saturation voltage VCE(sat) IC=200mA, IB= 40mA     0.5 V
Base-emitter saturation voltage VBE(sat) IC=200mA, IB= 40mA     1.1 V

 

Transition frequency

 

fT

VCE=10V, IC=100mA

f =1MHz

 

5

    

 

MHz
Fall time tf IC=1A, IB1=-IB2=0.2A VCC=100V     0.5 µs
Storage time ts       2.5 µs

 

 

CLASSIFICATION OF hFE1

Range 9-15 15-20 20-25 25-30 30-35 35-40

 

 


Typical Characteristics

 

 TO-252Tip Power Transistors 3DD13002 Transistor NPNTO-252Tip Power Transistors 3DD13002 Transistor NPNTO-252Tip Power Transistors 3DD13002 Transistor NPNTO-252Tip Power Transistors 3DD13002 Transistor NPN
 

 

TO-92 Package Outline Dimensions

 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 1.050 1.350 0.042 0.054
B 1.350 1.650 0.053 0.065
b 0.500 0.700 0.020 0.028
b1 0.700 0.900 0.028 0.035
c 0.430 0.580 0.017 0.023
c1 0.430 0.580 0.017 0.023
D 6.350 6.650 0.250 0.262
D1 5.200 5.400 0.205 0.213
E 5.400 5.700 0.213 0.224
e 2.300 TYP. 0.091 TYP.
e1 4.500 4.700 0.177 0.185
L 7.500 7.900 0.295 0.311

 

 

TO-252Tip Power Transistors 3DD13002 Transistor NPN

 

 


Product Tags:

tip pnp transistor

      

high power pnp transistor

      
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