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3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V

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3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : 3DD13001B

PC : 0.75W

VCEO : 420V

VCBO : 600V

Product name : semiconductor triode type

Tj : 150℃

Type : Triode Transistor

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TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN)

 

FEATURE
 

Ÿ power switching applications

 

 

MARKING

13001=Device code

S 6B=Code

 

3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V

 

 

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
3DD13001B TO-92 Bulk 1000pcs/Bag
3DD13001B-TA TO-92 Tape 2000pcs/Box


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector -Base Voltage 600 V
VCEO Collector-Emitter Voltage 420 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 0.2 A
PC Collector Power Dissipation 0.75 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55 ~150 ℃

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 100μA , IE=0 600     V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400     V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 7     V
Collector cut-off current ICBO VCB= 600V , IE=0     100 μA
Collector cut-off current ICEO VCE= 400V, IB=0     200 μA
Emitter cut-off current IEBO VEB=7V, IC=0     100 μA

 

DC current gain

 hFE(1) VCE= 20V, IC= 20mA 14   29  
  hFE(2) VCE= 10V, IC= 0.25 mA 5      
Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 mA     0.5 V
Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 10mA     1.2 V
Transition frequency fT

VCE= 20V, IC=20mA

f = 1MHz

 8     MHz
Fall time tf

 

IC=50mA, IB1=-IB2=5mA, VCC=45V

     0.3 μs
Storage time tS       1.5 μs

 
  

CLASSIFICATION OF hFE(2)

Range 14-17 17-20 20-23 23-26 26-29

 

 

 

 

TO-92 Package Outline Dimensions

 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430   0.135  
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
Φ   1.600   0.063
h 0.000 0.380 0.000 0.015

 

 

3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V

 

 


Product Tags:

tip pnp transistor

      

tip series transistors

      
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