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TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

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TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : B772M

VCBO : -40V

VCEO : -30V

Storage Temperature : -55-150℃

Power mosfet transistor : TO-251-3L Plastic-Encapsulate

Material : Silicon

Type : Triode Transistor

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TO-251-3L Plastic-Encapsulate Transistors  B772M TRANSISTOR (PNP)

 

 

FEATURES

 

Low Speed Switching

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -3 A
PC Collector Power Dissipation 1.25 W
RӨJA Thermal Resistance, junction to Ambient 100 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

 
 
 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-100μA ,IE=0 -40     V
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30     V
Emitter-base breakdown voltage V(BR)EBO IE= -100μA,IC=0 -6     V
Collector cut-off current ICBO VCB= -40V, IE=0     -1 μA
Collector cut-off current ICEO VCE=-30V, IB=0     -10 μA
Emitter cut-off current IEBO VEB=-6V, IC=0     -1 μA
DC current gain hFE VCE= -2V, IC= -1A 60   400  
Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A     -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A     -1.5 V

 

Transition frequency

 fT

VCE= -5V, IC=-0.1A

f =10MHz

 

50

 

80

  

 

MHz

 
  

CLASSIFICATION OF hFE(2)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400

 

 

 


Typical Characteristics

 

 
 TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon MaterialTO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon MaterialTO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon MaterialTO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

 

 

 

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 2.200 2.380 0.087 0.094
A1 0.000 0.100 0.000 0.004
B 0.800 1.400 0.031 0.055
b 0.710 0.810 0.028 0.032
c 0.460 0.560 0.018 0.022
c1 0.460 0.560 0.018 0.022
D 6.500 6.700 0.256 0.264
D1 5.130 5.460 0.202 0.215
E 6.000 6.200 0.236 0.244
e 2.286 TYP. 0.090 TYP.
e1 4.327 4.727 0.170 0.186
M 1.778REF. 0.070REF.
N 0.762REF. 0.018REF.
L 9.800 10.400 0.386 0.409
L1 2.9REF. 0.114REF.
L2 1.400 1.700 0.055 0.067
V 4.830 REF. 0.190 REF.
ĭ 1.100 1.300 0.043 0.0±1

 

 

 

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

 

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

TO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon MaterialTO-251-3L Tip Power Transistors B772M PNP VCEO -30V Silicon Material

 

 


 
 

 


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