A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type

Product Categories

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Contact Now

A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type

Name: A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type
Brand: Hua Xuan Yang
Price: 1 USD

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : A94

VCBO : -400V

VCEO : -400V

VEBO : -5V

Product name : silicon semiconductor triode type

Tj : 150Š

Power Mosfet Transistor : TO-92 Plastic-Encapsulate

Contact Now

TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP)

FEATURE

High Breakdown Voltage

MARKING

A94=Device code

Solid dot=Green molding compound device, if none,the normal device

Z=Rank of hFE

XXX=Code

A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type

ORDERING INFORMATION

Part Number	Package	Packing Method	Pack Quantity
A94	TO-92	Bulk	1000pcs/Bag
A94-TA	TO-92	Tape	2000pcs/Box

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Coll ector-Base Voltage	-400	V
VCEO	Coll ector-Emitter Voltage	-400	V
VEBO	Emitter-Base Voltage	-5	V
I_C	Coll ector Current -Continuous	-0.2	A
ICM	Coll ector Current -Pulsed	-0.3	A
P_C	Coll ector Power Dissipation	625	mW
RθJA	Thermal Resist ance From Junction To ambient	200	℃ /W
T_J	Junction Temperature	150	℃
Tstg	Storage Temperature	-55~+150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=-100µA,I_E=0	-400			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=-1mA,I_B=0	-400			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=-100µA,I_C=0	-5			V
Collector cut-off current	ICBO	V_CB=-400V,I_E=0			-0.1	μA
Collector cut-off current	ICEO	V_CE=-400V,I_B=0			-5	μA
Emitter cut-off current	IEBO	V_EB=-4V,I_C=0			-0.1	μA
DC current gain	hFE(1)	V_CE=-10V, I_C=-10mA	80		300
	hFE(2)	V_CE=-10V, I_C=-1mA	70
	hFE(3)	V_CE=-10V, I_C=-100mA	60
	hFE(4)	V_CE=-10V, I_C=-50mA	80
Collector-emitter saturation voltage	VCE(sat)(1)	I_C=-10mA,I_B=-1mA			-0.2	V
Collector-emitter saturation voltage	VCE(sat)(2)	I_C=-50mA,I_B=-5mA			-0.3	V
Base-emitter saturation voltage	VBE(sat)	I_C=-10mA,I_B=-1mA			-0.75	V
Transition frequency	f_T	V_CE=-20V, I_C=-10mA,f=30MHz	50			MHz

CLASSIFICATION OF h_FE(2)

RANK	A	B	C
RANGE	80-100	100-200	200-300

Typical Characteristics

A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type

Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	3.300	3.700	0.130	0.146
A1	1.100	1.400	0.043	0.055
b	0.380	0.550	0.015	0.022
c	0.360	0.510	0.014	0.020
D	4.300	4.700	0.169	0.185
D1	3.430		0.135
E	4.300	4.700	0.169	0.185
e	1.270 TYP		0.050 TYP
e1	2.440	2.640	0.096	0.104
L	14.100	14.500	0.555	0.571
0		1.600		0.063
h	0.000	0.380	0.000	0.015

Product Tags:

tip pnp transistor

tip series transistors