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D965 NPN Transistor Circuit , NPN Power Transistor High Performance

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D965 NPN Transistor Circuit , NPN Power Transistor High Performance

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : D965

VCBO : 42V

VCEO : 22V

VEBO : 6V

Product name : semiconductor triode type

Collector Power Dissipation : 750mW

Tj : 150Š

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TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN)

 

 

FEATURE

Ÿ Audio Amplifier

Ÿ Flash Unit of Camera

Ÿ Switching Circuit

 

 

MARKING

 

D965=Device code

Solid dot=Green molding compound device,

if none,the normal device

Z=Rank of hFE, XXX=Code

 

D965 NPN Transistor Circuit , NPN Power Transistor High Performance

 

 

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity
D965 TO-92 Bulk 1000pcs/Bag
D965-TA TO-92 Tape 2000pcs/Box


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

Symbol Para meter Value Unit
VCBO Collector-Base Voltage 42 V
VCEO Collector-Emitter Voltage 22 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 5 A
PD Collector Power Dissipation 750 mW
R0 JA Thermal Resist ance f rom Junction to Ambient 166.7 Š / W
Tj Junction Temperature 150 Š
Tstg St orage Temperature -55 ~+150 Š

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

 

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 42     V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 22     V
Emitter-base breakdown voltage V(BR)EBO IE= 10µA, IC=0 6     V
Collector cut-off current ICBO VCB=30V,IE=0     0.1 µA
Emitter cut-off current IEBO VEB=6V, IC=0     0.1 µA

 

DC current gain

 hFE(1) VCE=2V, IC= 0.15 mA 150      
hFE(2) VCE= 2V,IC = 500 mA 340   2000  
hFE(3) VCE=2V, IC = 2A 150      
Collector-emitter saturation voltage VCE(sat) IC=3000mA,IB=100 mA     0.35 V
Transition frequency fT VCE=6V, IC=50mA,f=30MHz   150   MHz

 
  

CLASSIFICATION OF hFE(2)

Rank R T V
Range 340-600 560-950 900-2000

 

 

 

 

Typical Characteristics

 

D965 NPN Transistor Circuit , NPN Power Transistor High PerformanceD965 NPN Transistor Circuit , NPN Power Transistor High PerformanceD965 NPN Transistor Circuit , NPN Power Transistor High PerformanceD965 NPN Transistor Circuit , NPN Power Transistor High Performance

 
 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430   0.135  
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0   1.600   0.063
h 0.000 0.380 0.000 0.015

 

 


Product Tags:

tip series transistors

      

high power pnp transistor

      
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