3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

Name: 3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage
Brand: Hua Xuan Yang
Price: 1 USD

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : 3DD13002B

VCBO : 600V

VCEO : 400V

Collector-Base Voltage : 6V

Product name : semiconductor triode type

Power mosfet transistor : TO-92 Plastic-Encapsulate

Type : Triode Transistor

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TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN)

FEATURE

Power Switching Applications

MARKING

13002B=Device code

Solid dot=Green molding compound device, if none,the normal device

XXX=Code

3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

ORDERING INFORMATION

Part Number	Package	Packing Method	Pack Quantity
3DD13002B	TO-92	Bulk	1000pcs/Bag
3DD13002B-TA	TO-92	Tape	2000pcs/Box

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	600	V
VCEO	Collector-Emitter Voltage	400	V
VEBO	Emitter-Base Voltage	6	V
I_C	Collector Current -Continuous	0.8	A
P_C	Collector Power Dissipation	0.9	W
T_J	Junction Temperature	150	℃
Tstg	Storage Temperature	-55 ~ 150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=100μA,I_E=0	600			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=1mA,I_B=0	400			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= 100μA,I_C=0	6			V
Collector cut-off current	ICBO	V_CB= 600V,I_E=0			100	µA
	ICEO	V_CE= 400V,I_B=0			100	µA
Emitter cut-off current	IEBO	V_EB= 6 V, I_C=0			100	µA
Dc c urrent gain	hFE1	V_CE= 10 V, I_C=200mA	9		40
	hFE2	V_CE= 10 V, I_C=0.25mA	5
Collector-emitter saturation voltage	VCE(sat)	I_C=200mA, I_B=40mA			0.5	V
Base-emitter saturation voltage	VBE(sat)	I_C=200mA, I_B=40mA			1.1	V
Transition frequency	f_T	V_CE=10V, I_C=100mA f =1MHz	5			MHz
Fall time	t_f	I_C=1A, I_B1=-I_B2=0.2A V_CC=100V			0.5	µs
Storage time	t_s				2.5	µs

CLASSIFICATION OF h_FE(2)

Range

9-15

15-20

20-25

25-30

30-35

35-40

Typical Characteristics

3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

TO-92 Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	3.300	3.700	0.130	0.146
A1	1.100	1.400	0.043	0.055
b	0.380	0.550	0.015	0.022
c	0.360	0.510	0.014	0.020
D	4.300	4.700	0.169	0.185
D1	3.430		0.135
E	4.300	4.700	0.169	0.185
e	1.270 TYP		0.050 TYP
e1	2.440	2.640	0.096	0.104
L	14.100	14.500	0.555	0.571
Φ		1.600		0.063
h	0.000	0.380	0.000	0.015

Product Tags:

tip series transistors

high power pnp transistor