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2N5551 Tip Power Transistors For Electronic Components VCBO 180V

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2N5551 Tip Power Transistors For Electronic Components VCBO 180V

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : 2N5551

VCBO : 180V

VCEO : 160V

VEBO : 6V

Usage : Electronic Components

Tj : 150℃

Case : Tape/Tray/Reel

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TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR (NPN)

 

 

FEATURE
 

Ÿ General Purpose Switching Application

 

 

MARKING

 

2N5551=Device code

Solid dot=Green molding compound device, if none,the normal device

Z=Rank of hFE

 

2N5551 Tip Power Transistors For Electronic Components VCBO 180V

 

 

ORDERING INFORMATION

Part Number Packing Method Pack Quantity
2N5551 Bulk 1000pcs/Bag
2N5551-TA Tape 2000pcs/Box


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 180 V
VCEO Collector-Emitter Voltage 160 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 0.6 A
PC Collector Power Dissipation 625 mW
R0 JA Thermal Resistance From Junction To Ambient 200 Š /W
Tj Junction Temperature 150 Š
Tstg Storage Temperature -55~+150 Š

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified

 

 

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 180     V
Collector-emitter breakdown voltage V(BR)CEO* IC=1mA,IB=0 160     V
Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 6     V
Collector cut-off current ICBO VCB=120V,IE=0     50 nA
Emitter cut-off current IEBO VEB=4V,IC=0     50 nA

 

DC current gain

 hFE(1) VCE=5V, IC=1mA 80      
  hFE(2) VCE=5V, IC=10mA 100   300  
  hFE(3) VCE=5V, IC=50mA 50      
Collector-emitter saturation voltage VCE(sat)˄1˅ IC=10mA,IB=1mA     0.15 V
  VCE(sat)˄2˅ IC=50mA,IB=5mA     0.2 V
Base-emitter saturation voltage VBE (sat)˄1˅ IC=10mA,IB=1mA     1 V
  VBE (sat)˄2˅ IC=50mA,IB=5mA     1 V
Collector output capacitance Cob VCB=10V,IE=0, f=1MHz     6 pF
Emitter input capacitance Cib VBE=0.5V,IC=0, f=1MHz     20 pF
Transition frequency fT VCE=10V,IC=10mA, f=100MHz 100   300 MHz

 
  

CLASSIFICATION OF hFE(2)

RANK A B C
RANGE 100-150 150-200 200-300

 

 

 

 

Typical Characteristics

 

2N5551 Tip Power Transistors For Electronic Components VCBO 180V

2N5551 Tip Power Transistors For Electronic Components VCBO 180V

2N5551 Tip Power Transistors For Electronic Components VCBO 180V

2N5551 Tip Power Transistors For Electronic Components VCBO 180V


 

 

 

 

 


 
 

 Package Outline Dimensions
 

Symbol Dimensions In Millimeters Dimensions In Inches
  Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430   0.135  
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0   1.600   0.063
h 0.000 0.380 0.000 0.015

 

 


Product Tags:

tip pnp transistor

      

tip series transistors

      
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